类型 | 描述 |
---|
安装方式 | Surface Mount |
引脚数 | 3 Pin |
额定电压(DC) | 600 V |
额定电流 | 11.0 A |
封装 | TO-263 |
漏源极电阻 | 450 mΩ |
极性 | N-Channel |
功耗 | 160 W |
漏源极电压(Vds) | 600 V |
漏源击穿电压 | 600 V |
栅源击穿电压 | -30.0 V to 30.0 V |
连续漏极电流(Ids) | 11.0 A |
类型 | 描述 |
---|
产品生命周期 | Active |
包装方式 | Cut Tape (CT) |
N 通道 MDmesh™,600V/650V,STMicroelectronics
●### MOSFET 晶体管,STMicroelectronics
ST Microelectronics(意法半导体)
16 页 / 0.35 MByte
ST Microelectronics(意法半导体)
5 页 / 0.04 MByte
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N沟道650V TJMAX - 0.4OHM - 11A TO- 220 / FP / D2PAK / I2PAK的MDmesh功率MOSFET N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
ST Microelectronics(意法半导体)
N 通道 MDmesh™,600V/650V,STMicroelectronics### MOSFET 晶体管,STMicroelectronics
ST Microelectronics(意法半导体)
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ST Microelectronics(意法半导体)
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