RN1602 数据手册 - Toshiba（东芝）

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)| 50V \---|--- 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)| 50V 集电极连续输出电流IC Collector Current(IC)| 100mA Q1基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 10KΩ/Ohm Q1电阻比(R1/R2) Q1 Resistance Ratio| 1 Q2基极输入电阻R1 Input Resistance(R1)| 10KΩ/Ohm Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)| 10KΩ/Ohm Q2电阻比(R1/R2) Q2 Resistance Ratio| 1 直流电流增益hFE DC Current Gain(hFE)| 50 截止频率fT Transtion Frequency(fT)| 250MHz 耗散功率Pc Power Dissipation| 300mW/0.3W Description & Applications| Features • TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) • Including two devices in SM6 (super-mini-type with six (6) leads) • With built-in bias resistors • Simplified circuit design • Reduced number of parts and manufacturing process • Complementary to RN2601 to RN2606 APPLICATIONS • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 描述与应用| 特点 •东芝晶体管的硅NPN外延式（PCT的进程）（偏置电阻内置晶体管）包括两个设备在SM6（超迷你型六（6）导致） •借助内置的偏置电阻 •简化电路设计 •数量减少零部件和制造工艺 •互补RN2601 RN2606 应用 •开关，逆变电路，接口电路和驱动器电路应用