PMBFJ111 数据手册 - NXP（恩智浦）

最大源漏极电压VdsDrain-Source Voltage| 40v

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●栅源极击穿电压V(BR)GSGate-Source Voltage| -40v

●漏极电流(Vgs=0V)IDSSDrain Current| 20ma

●关断电压Vgs(off)Gate-Source Cut-off Voltage| -10~-3v

●耗散功率PdPower Dissipation| 300mW/0.3W

●Description & Applications| •N-channel junction FETs •High-speed switching •Interchangeability of drain and source connections •Low RDSon at zero gate voltage (< 30  for PMBFJ111). •Analog switches •Commutators •Multiplexers • Thin and thick film hybrids.

●描述与应用| •N沟道结场效应晶体管 •高速开关 •漏极和源极连接的互换性 •在零电压（<30为PMBFJ111），低导通电阻。 •模拟开关 •交换机 •多路复用器 •薄和厚薄膜混合动力汽车。