| 类型 | 描述 |
|---|
| 安装方式 | Surface Mount |
| 额定电压(DC) | 11.0 V |
| 额定电流 | 1.50 A |
| 封装 | SOT-223 |
| 极性 | NPN |
| 击穿电压(集电极-发射极) | 110V |
| 集电极最大允许电流 | 1.5A |
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 140V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 110V 集电极连续输出电流ICCollector Current(IC)| 1.5A 截止频率fTTranstion Frequency(fT)| 150MHz 直流电流增益hFEDC Current Gain(hFE)| 500~2000 管压降VCE（sat）Collector-Emitter Saturation Voltage| 1V 耗散功率PcPower Dissipation| 1W Description & Applications| • NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06. 描述与应用| •达林顿晶体管NPN This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06.
Fairchild（飞兆/仙童）
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Fairchild（飞兆/仙童）
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Fairchild（飞兆/仙童）
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