NSS20101JT1G 数据手册 - ON Semiconductor（安森美）

集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V \---|--- 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V 集电极连续输出电流ICCollector Current(IC) | 1.0A 截止频率fTTranstion Frequency(fT) | 350MHZ 直流电流增益hFEDC Current Gain(hFE) | 100~500 管压降VCE（sat）Collector-Emitter Saturation Voltage | 0.22V/220mV 耗散功率PcPower Dissipation | 300mW Description & Applications | 20 V, 1.0 A, Low VCE(sat) NPN Transistor ON Semiconductor"s e2PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC−DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU"s control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 描述与应用 | 20 V，1.0 A，低VCE（sat）的NPN晶体管 安森美半导体的低VCE（sat）的晶体管e2PowerEdge家庭微型表面贴装器件，具有超低饱和电压（VCE（sat））和高电流增益能力。这是专为使用低电压，高速开关应用在负担得起的高效节能控制是非常重要的。 典型的应用是DC-DC转换器和电源管理在便携式和电池供电产品，如手机，无绳电话，掌上电脑，电脑，打印机，数码相机和MP3播放器。其他应用低电压大容量存储产品，如光盘驱动器和磁带驱动器的电机控制。在汽车行业中，它们可以被用来在空气袋部署和仪表板中的。高电流增益允许e2PowerEdge设备，是PMU的控制输出，直接驱动，线性增益（试用版），使他们在模拟放大器的理想元件。