集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO)| 50V
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●集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO)| 45V
●集电极连续输出电流ICCollector Current(IC)| 100mA/0.1A
●截止频率fTTranstion Frequency(fT)| 100MHz
●直流电流增益hFEDC Current Gain(hFE)| 200~450
●管压降VCE（sat）Collector-Emitter Saturation Voltage| 200~600 mV
●耗散功率PcPower Dissipation| 300mW/0.3W
●Description & Applications| General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
●描述与应用| 通用晶体管 NPN硅 特点 •湿度敏感度等级：1 •ESD额定值 - 人体模型：>4000 V ESD额定值 - 机器型号：> 400 V •这些器件是无铅，无卤素，无 BFR
