2N7002 数据手册

●最大源漏极电压Vds Drain-Source Voltage| 60V \---|--- 最大栅源极电压Vgs(±) Gate-Source Voltage| 30V 最大漏极电流Id Drain Current| 300mA/0.3A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 2.8Ω/Ohm @500mA,10V 开启电压Vgs（th） Gate-Source Threshold Voltage| 1-2.5V 耗散功率Pd Power Dissipation| 830mW/0.83W Description & Applications| SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor Features 60 V, 300 mA N-channel Trench MOSFET Suitable for logic level gate drive sources Very fast switching Surface-mounted package Trench MOSFET technology 描述与应用| 表面贴装 N沟道增强型场效应晶体管 特性 60 V，300毫安N通道沟道MOSFET 适用于逻辑电平栅极驱动源 开关速度非常快 表面贴装封装 沟道MOSFET技术